Semiconductor Graphite Mold

Introduction

A Semiconductor Graphite Mold is a specialized mold made from high-purity graphite used in the semiconductor manufacturing process.

High-purity graphite material
The Semiconductor Graphite Mold is made of high-quality graphite raw materials with a purity of ≥99.9%, ensuring no impurities and low ash content (≤0.05%), avoiding contamination during high temperature and semiconductor manufacturing.

High-precision processing capabilities
Our products support dimensional tolerances within ±0.02mm, which can meet the processing of complex geometric shapes and microstructures. Secondly, we use advanced CNC equipment (CNC) with professional measuring instruments to ensure that the processing accuracy meets customer customization requirements.

Excellent thermal stability
The thermal conductivity of our graphite molds reaches ≥120 W/m·K, and the maximum operating temperature can reach 2000℃. This ensures that in the semiconductor high-temperature process, the mold can quickly and evenly dissipate heat to prevent local overheating and deformation.

Crystal Growth and Pulling
The Semiconductor Graphite Mold is widely used in the pulling process of single crystal silicon wafers as crucibles and holders.

Wafer Sintering and Annealing
These molds are used as carriers or trays in high temperature sintering and annealing processes for semiconductor wafers, providing excellent heat distribution and maintaining dimensional stability under thermal cycling conditions.

Epitaxial Layer Deposition
Graphite molds are used as part of the reaction chamber or substrate holder during epitaxial growth processes, allowing precise temperature control and maintaining a clean, inert environment, which is important for high quality epitaxial layers.